CTE Matching IC Substrate
Active Mold Packaging for CTE Matching package substrate formation
IC Packaging and SiP manufacturing require the use of many different materials. This is posing some serious challenges for the designers and packaging houses, in terms of thermally induced stress and subsequent production yield and lifetime of the device.
Active Mold Packaging (AMP) is a potent mean to reduce this specific complexity. It can be used as a substrate material that alleviates the different coefficients of thermal expansion (CTE) of the semiconductor die and all other organic and inorganic elements inside a package. Additionally AMP is a mid-range interconnect technology with Line and Space (L/S) of 25 µm each and high-aspect ratio true Through Mold Via (TMV) formation of up to 1:10. Clearly offering resolution advantage when compared to the modified Semi-Additive Process (mSAP).
Seen from a vantage point AMP is a strong alternative to organic substrates (FR4), for the formation of redistribution layers and can play its role even in fan-out Wafer and Panel Level Packaging (fo-WLP/ fo-PLP)
AMP is offering a selection of benefits, when compared to traditional substrate technologies.
- 20% reduced footprint, due to smaller vias and via pads
- high true TMV aspect ratio of 1:10
- better CTE match and alleviating CTE mismatches between the die and copper
- limited topography due to embedded conductors, landing- and via-pads
Active Mold Packaging (AMP) forms the metallic interconnect layers on the Epoxy Mold Compound by making use of three sophisticated processes:
- Granular or tablet form, specially doped Epoxy Mold Compound (EMC)
- Selective laser activation of the EMC by surface ablation, deep grooving/ trenching and TMV drilling
- Electro-less metalisation, of only the laser activated EMC